Electric Transport and Dielectrics

Measurements
How to measure a capacitance of a thin film
Sheet resistance of a thin film
Transmission Line Calculations
Hall Effect and its Measurements
Measurements of Hall Effect: Hall Bar and Van der Pauw Geometry
Measurements of Ferroelectricity

Mechanisms
Metal semiconductor interfaces
Interface band alignment: charge displacement
Transport through Metal-Insulator-Metal (MIM) Structure I
Transport through Metal-Insulator-Metal (MIM) Structure II
Space charge limited conduction
Space charge limited conduction mechanism I
Space charge limited conduction mechanism II
Low temperature resistance
Resonant tunneling I, numeric
Resonant tunneling I, Green's function
T dependence of resistivity
Classical theory of scattering in thin films
Resistivity of metallic thin films

Electroresistance
Switchable diode in BiFeO3
Filament related memories
Resistance switching memory: interface charge movement affected band alignment
Organic Resistive Memories and Mechanism
Polarization Modulated Capacitance
Tunneling electro-resistance
Tunneling Electroresistance by Interfacial Band Engineering
Ferroelectric v.s. Redox Resistance Switching
Ferroelectric Synapses memristor
Resistive switching in ferroelectric heterostructures

Magnetoresistance/spin transport
Boundary resistance and giant magnetoresistance
Hanle effect
MR Reversal non Ferroelectric
Strain-mediated Magnetoelectric Coupling in heterostructures
Magnetoelectric Coupled Heterostructures
Spin Hall Magnetoresistance
Long carrier lifetime by Rashba splitting
Long range charge diffusion

Devices
Key features for next-generation memories
Reduced Capacitance in MIM structure
Organic spin valve
Electro-resistance in tunneling junction: ferroelectricity or redox?
Room temperature organic spin valve
Memeory cell
Dielectrics
Dielectric relaxation Dielectric relaxation and materials