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Intrinsic ferroelectricity in Y:HfO2
Ferroelectric HfO2-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Our work reveals the intrinsic ferroelectricity of Y doped HfO2.
See more details: Nature Materials volume 21, pages903–909 (2022)
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Perpendicular magnetic anisotropy in conducting NiCo2O4 films from spin-lattice coupling
High perpendicular magnetic anisotropy (PMA), a property needed for nanoscale spintronic applications, is rare in oxide conductors. We report the observation of a PMA up to 0.23 MJ/m3 in modestly strained (–0.3%) epitaxial NiCo2O4 films which are room-temperature ferrimagnetic conductors.
See more details: PHYSICAL REVIEW B 101, 014413 (2020).
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Electric-field assisted nucleation processes of croconic acid films
Growth of organic thin films using physical vapor deposition typically follows a three-dimensional mode, resulting in a rough surface, which undermines their application potential. We found that the electric field decreases the sublimation temperature, increases the wetting angle, and decreases the surface diffusion barrier. These results provide important insight into the growth of molecular crystal films under electric fields and pave the way to fabricating films with better surface characteristics for molecular ferroelectric films.
See more details: CrystEngComm, 2019, 21, 7460–7467.
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