FerroThinFilms Lab

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Research News

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Nanostructural origin of semiconductivity in epitaxial NiCo2O4/Al2O3 thin films
CA growth
NiCo2O4 has been revealed as metallic in epitaxial NiCo2O4/MgAl2O4 thin films. However, even with the same optimal growth condition, the NiCo2O4/Al2O3 films are always semiconducting. Using a suite of characterization such as magnetometer, transport, x-ray diffraction, as well as the change of NiCo2O4 upon annealing, we found that the structural disorder caused by the difference between the substrate and the film structures is the origin of the semiconductivity and the large magnetoresistance. See more details: J. Phys. D: Appl. Phys. 51, 145308 (2018).

Recent progresses of ferroelectric control of magnetoresistance in organic spin valves
CA growth
Ferroelectricity has been introduced to organic spin valves to manipulate the magneto transport, where the spin transport through the ferromagnet/organic spacer interfaces (spinterface) are under intensive study. The ferroelectric materials in the organic spin valves provide a knob to vary the interfacial energy alignment and the interfacial crystal structures, both are critical for the spin transport. In this review, we introduce the recent efforts of controlling magnetoresistance of organic spin valves using ferroelectricity, where the ferroelectric material is either inserted as an interfacial layer or used as a spacer material. See more details: J Materiomics 4, 1-12 (2018).